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 (R)
STD888
HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
Ordering Code STD888
s
Marking D888
s s s s
VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4")
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APPLICATIONS s POWER MANAGEMENT IN PORTABLE EQUIPMENT s VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS s HEAVY LOAD DRIVER DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj March 2003 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value -60 -30 -6 -5 -10 15 -65 to 150 150
Unit V V V A A W
o o
C C 1/6
STD888
THERMAL DATA
R thj-case * Thermal Resistance Junction-Case Max 8.33
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -30 V V CB = -30 V V EB = -6 V I C = -10 mA -30 T j = 100 o C Min. Typ. Max. -10 -1 -10 Unit nA A nA V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage
I C = -100 A
-60
V
V (BR)EBO
I E = -100 A
-6
V
V CE(sat)
IC IC IC IC IC IC
= = = = = =
-500 mA -2 A -5 A -6 A -8 A -10 A
I B = -5 mA I B = -50 mA I B = -250 mA I B = -250 mA I B = -400 mA I B = -500 mA I B = -50 mA I B = -250 mA V CE = -1 V V CE = -1 V V CE = -1 V V CE = -1V V CE = -1 V V CE = -1 V 150 150 75 75 40 15 200 200 100 100 55 35 180 160 250 80
-0.15 -0.25 -0.70 -0.70 -1 -1.5 -1.1 -1.4 300
V V V V V V V V
V BE(sat) h FE
Base-Emitter Saturation Voltage DC Current Gain
I C = -2 A I C = -6 A IC IC IC IC Tj IC IC = = = = = = = -10 mA -500 mA -5 A -5 A 100 o C -8 A -10 A
td tr ts tf
RESISTIVE LOAD Delay Time RiseTime StorageTime Fall Time
I C = -3 A I B1 = - I B2 = -60 mA V CC = -20 V (see figure 1)
220 210 300 100
ns ns ns ns
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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STD888
DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching Times Resistive Load
Switching Times Resistive Load
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STD888
Figure 1: Resistive Load Switching Test Circuit.
1) Fast electronic switch 2) Non-inductive Resistor
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STD888
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
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STD888
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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